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IC62C1024AL-70QI 参数 Datasheet PDF下载

IC62C1024AL-70QI图片预览
型号: IC62C1024AL-70QI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8低功耗CMOS SRAM [128K x 8 Low Power CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 142 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC62C1024AL  
128K x 8 LOW POWER CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSI IC62C1024AL is a low power,131,072-word by 8-bit  
CMOS static RAM. It is fabricated using ICSI's high-  
performance CMOS technology. This highly reliable process  
coupled with innovative circuit design techniques, yields higher  
performance and low power consumption devices.  
• High-speed access time: 35, 45, 55, 70 ns  
Low active power: 450 mW (typical)  
Low standby power: 150 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
• Fully static operation: no clock or refresh  
required  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
Easy memory expansion is provided by using two Chip Enable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
The IC62C1024L is available in 32-pin 600mil DIP, 450mil SOP  
and 8*20mm TSOP-1 packages.  
FUNCTIONAL BLOCK DIAGRAM  
512 x 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
2
Integrated Circuit Solution Inc.  
ALSR009-0A 5/7/2002