Integrated
Circuit
Systems, Inc.
ICS83026I-01
L
OW
S
KEW
, 1-
TO
-2
D
IFFERENTIAL
-
TO
-LVCMOS/LVTTL F
ANOUT
B
UFFER
4.6V
-0.5V to V
DD
+ 0.5 V
-0.5V to V
DDO
+ 0.5V
112.7°C/W (0 lfpm)
101.7°C/W (0 lfpm)
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the
DC Characteristics
or
AC Character-
istics
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
A
BSOLUTE
M
AXIMUM
R
ATINGS
Supply Voltage, V
DD
Inputs, V
I
Outputs, V
O
Package Thermal Impedance,
θ
JA
8 Lead SOIC
8 Lead TSSOP
Storage Temperature, T
STG
T
ABLE
3A. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DD
= 3.3V ± 5%, V
DDO
= 1.71V
TO
3.465V, T
A
= -40°C
TO
85°C
Symbol
V
DD
V
DDO
I
DD
I
DDO
Parameter
Positive Supply Voltage
Output Supply Voltage
Power Supply Current
Output Supply Current
Test Conditions
Minimum
3.135
3.135
2.375
1.71
Typical
3.3
3.3
2.5
1. 8
Maximum
3.465
3.465
2.625
1.89
10
3
Units
V
V
V
V
mA
mA
T
ABLE
3B. LVCMOS / LVTTL DC C
HARACTERISTICS
,
V
DD
= 3.3V ± 5%, V
DDO
= 2.375V
TO
3.465V, T
A
= -40°C
TO
85°C
Symbol
V
IH
V
IL
I
IH
I
IL
V
OH
Parameter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
OE
OE
OE
OE
V
DD
= V
IN
= 3.465V
V
DD
= 3.465V, V
IN
= 0V
V
DDO
= 3.135V
V
DDO
= 2.375V
-150
2.6
1.8
0.5
Test Conditions
Minimum
2
-0. 3
Typical
Maximum
V
DD
+ 0.3
0.8
5
Units
V
V
µA
µA
V
V
V
Output High Voltage; NOTE 1
V
OL
Output Low Voltage; NOTE 1
NOTE 1: Outputs terminated with 50
Ω
to V
DDO
/2. See Parameter Measurement Information section,
"Output Load Test Circuit" diagrams.
T
ABLE
3C. LVCMOS / LVTTL DC C
HARACTERISTICS
,
V
DD
= 3.3V ± 5%, V
DDO
= 1.8V ± 5%, T
A
= -40°C
TO
85°C
Symbol
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
83026BMI-01
Parameter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Output High Voltage
Output Low Voltage
OE
OE
OE
OE
Test Conditions
Minimum
2
-0.3
Typical
Maximum
V
DD
+ 0.3
0.8
5
Units
V
V
µA
µA
V
V
V
DD
= V
IN
= 3.465V
V
DD
= 3.465V, V
IN
= 0V
I
OH
= -100µA
I
OH
= -2mA
I
OL
= 100µA
I
OL
= 2mA
www.icst.com/products/hiperclocks.html
3
-150
V
DDO
- 0.2
V
DDO
- 0.45
0. 2
0.45
V
V
REV. A JANUARY 16, 2006
ICS [ INTEGRATED CIRCUIT SYSTEMS ]
