IC-DI 参数 Datasheet PDF下载

iC-DI

DUAL SENSOR INTERFACE

Rev C2, Page 7/15

ELECTRICAL CHARACTERISTICS

Operating Conditions:

VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated

Item

No.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

High-Side Switch QP1, QP2; V(QCFG1) = V(QCFG2) = 5 V

201 Vs()hi

Saturation Voltage hi vs. VBO

RSET = 5.1 kΩ;

I() = -100 mA

I() = -50 mA

I() = -10 mA

202

203

204

205

206

Isc()hi

Vol()on

Vol()off

Vol()hys

llk()

Short-Circuit Current hi

RSET = 8.2 kΩ, V() = 0...VBO

−

1.5 V

Overload Detection Threshold on QP1, QP2 hi

→

lo; referenced to VBO

Overload Detection Threshold off QP1, QP2 lo

→

hi; referenced to VBO

Overload Detection Threshold

Hysteresis

Leakage Current at QP1, QP2

Vol()hys = Vol()off

−

Vol()on

OEN = lo;

V(QP1, QP2) = -6...0 V

V(QP1, QP2) = 0 V...VBO

V(QP1, QP2) > VBO...VBO + 6 V

VBO = 30 V, Cl = 2.2 nF

V(ISET) = 0 V, VBO

−

QPx > 4 V

QPx activated; V(QPx) = VBO...VBO + 6 V

Permanent overload (see Fig. 1)

-1.2

-0.7

-0.3

-160

-2.1

-1.8

0.1

-125

-100

-1.5

-1.4

V

V

V

mA

V

V

V

-500

-40

0

-630

-450

0

0

500

40

-350

1

µA

µA

µA

V/µs

mA

mA

µs

ms

207

208

209

301

302

SR()

Imax()

Ir()

toldly

tolcl

Slew Rate (switch off

→

on)

Maximum Current in QP1, QP2

Reverse Current in QP1, QP2

Time to Overload Message

(NOVL 1

→

0, switch tri-state)

Short-Circuit/Overload Monitor

126

35

180

50

280

80

Time to Overload Message Reset No overload (see Fig. 2)

(NOVL 0

→

1, switch active)

Turn-On Threshold VBR

Turn-Off Threshold VBR

Hysteresis

Time to Undervoltage Message

(NUVD 1

→

0, switch tri-state)

Time to Undervoltage Message

Reset (NUVD 0

→

1, switch ac-

tive)

Overtemperature Shutdown

(NOVL 1

→

0, switch tri-state)

Overtemperature Shutdown Re-

set Delay

(NOVL 0

→

1, switch active)

Input Threshold Voltage hi at IN1,

IN2, INV1, OEN

Input Threshold Voltage lo at IN1,

IN2, INV1, OEN

Hysteresis at IN1, IN2, INV1,

OEN

Pull-Down Current at IN1, IN2,

INV1

Pull-Down Current at OEN

Input Threshold hi at QCFG1,

QCFG2 (V() > Va()hi

⇒

QN1,

QN2 tri-state)

Vt()hys = Vt()hi

−

Vt()lo

V() = 0.4 V...Vt()lo

V() > Vt()hi

V(OEN) > 0.4 V

Referenced to VCC3 (see Fig. 3)

Referenced to GND

Decreasing voltage VBR

VBRhys = VBRon

−

VBRoff

Permanent undervoltage at VBR, VCC or

VCC3

No undervoltage at VBR, VCC and VCC3 (see

Fig. 1)

VBR Voltage Monitor

401

402

403

404

405

VBRon

VBRoff

VBRhys

tuvdly

tuvcl

8

7.3

200

15

35

50

500

100

80

9

8.5

V

V

mV

µs

ms

Temperature Monitor

501

502

Toff

ton

Increasing temperature Tj

Temperature Tj < Toff

130

35

50

155

80

°C

ms

Inputs IN1, IN2, INV1, QCFG1, QCFG2, OEN

601

602

603

604

605

606

Vt()hi

Vt()lo

Vt()hys

Ipd()

Ipd(OEN)

Vahi()

2

0.8

300

30

10

1

52

64

500

168

40

6

69

V

V

mV

µA

µA

µA

%

607

Vahi()hys

Hysteresis hi at QCFG1, QCFG2 Referenced to VCC3 (see Fig. 3)

(V() < Vahi()

−

Vahi()hys

⇒

QN1,

QN2 active)

3

7

%