iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 6/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item
No.
001
002
003
004
005
006
007
008
009
010
011
Symbol
Parameter
Conditions
Min.
VBO
I(VBO)
VBR
I(VBR)
Vc()hi
Vc()lo
Vc()hi
Vc()lo
Vc(CFI)hi
Vc(CFI)lo
Vc(VN)hi
Permissible Supply Voltage
Supply Current in VBO
Permissible Supply Voltage
Supply Current in VBR
Clamp Voltage hi at VBO, VBR
vs. VN
Clamp Voltage lo at VBO, VBR
vs. VN
Clamp Voltage hi at QN1, QN2
vs. VN
Clamp Voltage lo at QP1, QP2
vs. VN
Clamp Voltage hi at CFI vs. VN
Clamp Voltage lo at CFI vs. VN
Clamp Voltage hi at VN vs. low-
est voltage of QP1, QN1, QP2,
QN1, CFI
Clamp Voltage hi at VH, VHL
Clamp Voltage lo at VH, VHL
VH connected to VBR, no load,
I(VCC) = I(VCC3) = 0, V(OEN) = hi
I() = 10 mA
I() = -10 mA
I() = 1 mA, VBO and VBR > VN
I() = -1 mA, VBO and VBR > VN
I() = 1 mA
I() = -1 mA
I() = 1 mA
36
36
-9
36
-36
36
-36
39
-6
Referenced to VN
No load, I(QP1) = I(QP2) = 0, HSx switched on
9
24
9
Typ.
24
Max.
30
0.3
30
6
V
mA
V
mA
V
V
V
V
V
V
V
Unit
Total Device
012
013
014
Vc()hi
Vc()lo
Vc()hi
I() = 1 mA
I() = -1 mA
36
-36
7
V
V
V
Clamp Voltage hi at VCC, VCC3, I() = 1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
Clamp Voltage lo at VCC, VCC3, I() = -1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
Propagation Delay
IN1
→
QP1, QN1
IN2
→
QP2, QN2
VBO < VN (reverse bias)
VBO > VN; V(GND) < VN + 0.6V
015
Vc()lo
-0.5
V
016
tpio
2.4
11
µs
017
018
R(GND)off Resistance of GND switch
R(GND)on Resistance of GND switch
10
20
kΩ
Ω
Low-Side Switch QN1, QN2; V(QCFG1) = V(QCFG2) = 0 V
101 Vs()lo
Saturation Voltage lo at QN1,
RSET = 5.1 kΩ;
I() = 100 mA
QN2 vs. VN
I() = 50 mA
I() = 10 mA
102
103
104
105
106
Isc()lo
Vol()on
Vol()off
Vol()hys
llk()
Short-Circuit Current lo in QN1,
QN2
RSET = 8.2 kΩ, V() = 1.4 V...VBO
100
1.55
1.5
0.1
125
1.5
1
0.3
160
2.1
1.8
V
V
V
mA
V
V
V
Overload Detection Threshold on QN1, QN2 lo
→
hi; referenced to GND
Overload Detection Threshold off QN1, QN2 hi
→
lo; referenced to GND
Overload Detection Threshold
Hysteresis
Leakage Current at QN1, QN2
Vol()hys = Vol()on
−
Vol()off
OEN = lo;
V(QN1, QN2) = VBO...VBO + 6 V
V(QN1, QN2) = 0...VBO
V(QN1, QN2) = -6...0 V
VBO = 30 V, Cl = 2.2 nF
V(ISET) = 0 V, QNx > 3 V
QNx activated; V(QNx) = -6 V
0
0
-500
195
-10
300
50
50
0
45
450
µA
µA
µA
V/µs
mA
mA
107
108
109
SR()
Imax()
Ir()
Slew Rate (switch off
→
on)
Maximum Current in QN1, QN2
Reverse Current in QN1, QN2
ICHAUS [ IC-HAUS GMBH ]
