Si4430/31/32-B1
1. Electrical Specifications
Table 1. DC Characteristics1
Parameter
Symbol
Conditions
Min Typ Max Units
Supply Voltage Range
Power Saving Modes
VDD
1.8
—
3.0
15
3.6
50
V
IShutdown
RC Oscillator, Main Digital Regulator,
and Low Power Digital Regulator OFF2
nA
IStandby
ISleep
Low Power Digital Regulator ON (Register values retained)
and Main Digital Regulator, and RC Oscillator OFF
—
—
—
—
—
450
1
800
—
nA
µA
µA
µA
µA
RC Oscillator and Low Power Digital Regulator ON
(Register values retained) and Main Digital Regulator OFF
ISensor-LBD
ISensor-TS
IReady
Main Digital Regulator and Low Battery Detector ON,
Crystal Oscillator and all other blocks OFF2
1
—
Main Digital Regulator and Temperature Sensor ON,
Crystal Oscillator and all other blocks OFF2
1
—
Crystal Oscillator and Main Digital Regulator ON,
all other blocks OFF. Crystal Oscillator buffer disabled
800
—
TUNE Mode Current
RX Mode Current
ITune
IRX
Synthesizer and regulators enabled
—
—
—
8.5
18.5
85
—
—
—
mA
mA
mA
TX Mode Current
—Si4432
ITX_+20
txpow[2:0] = 111 (+20 dBm)
Using Silicon Labs’ Reference Design. TX current
consumption is dependent on match and board layout.
TX Mode Current
—Si4430/31
ITX_+13
txpow[2:0] = 110 (+13 dBm)
Using Silicon Labs’ Reference Design. TX current
consumption is dependent on match and board layout.
—
—
30
18
—
—
mA
mA
ITX_+1
txpow[2:0] = 001 (+1 dBm)
Using Silicon Labs’ Reference Design. TX current
consumption is dependent on match and board layout.
Notes:
1. All specification guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in the "Production Test Conditions" section on page 14.
2. Guaranteed by qualification. Qualification test conditions are listed in the "Production Test Conditions" section on
page 14.
Rev 1.0
7
IBM [ IBM ]
