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IBM13N8644HCC-10T 参数 Datasheet PDF下载

IBM13N8644HCC-10T图片预览
型号: IBM13N8644HCC-10T
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM Module, 8MX64, 9ns, CMOS, DIMM-168]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 19 页 / 361 K
品牌: IBM [ IBM ]
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IBM13N8644HCC  
IBM13N8734HCC  
8M x 64/72 One-Bank Unbuffered SDRAM Module  
AC Characteristics (TA= 0 to +70°C, VDD= 3.3V ± 0.3V)  
1. An initial pause of 200µs, with DQMB0-7 and CKE0 held high, is required after power-up. A Precharge All  
Banks command must be given followed by a minimum of eight Auto (CBR) Refresh cycles before or after  
the Mode Register Set operation.  
2. The Transition time is measured between V and V (or between V and V ).  
IH  
IL  
IL  
IH  
3. In addition to meeting the transition rate specification, the CK0, CK2, and CKE0 signals must transit  
between V and V (or between V and V ) in a monotonic manner.  
IH  
IL  
IL  
IH  
4. Load Circuit A: AC timing tests have V = 0.4 V and V = 2.4 V with the timing referenced to the 1.40V  
IL  
IH  
crossover point.  
5. Load Circuit A: AC measurements assume t =1.0 ns.  
T
6. Load Circuit B: AC timing tests have V = 0.8 V and V = 2.0 V with the timing referenced to the 1.40V  
IL  
IH  
crossover point.  
7. Load Circuit B: AC measurements assume t =1.2 ns.  
T
AC Characteristics Diagrams  
t
T
Vtt=1.4V  
t
CKH  
V
IH  
50Ω  
Output  
1.4V  
VIL  
Clock  
Input  
t
CKL  
Zo = 50Ω  
50pF  
t
SETUP  
AC Output Load Circuit (A)  
t
HOLD  
1.4V  
Output  
Zo = 50Ω  
t
OH  
t
AC  
50pF  
t
LZ  
AC Output Load Circuit (B)  
1.4V  
Output  
19L7295.E93875B  
12/99  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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