IBM3602022Q020
Datasheet
900 MHz AMPS/TDMA Power Amplifier
Features
• Highly integrated SiGe BiCMOS technology
19
VCC_D
18
VCC_D
20
GND
17
GND
AMPS/TDMA Power Amplifier Block Diagram
• +29.5dBm output power for TDMA operation
• +31.5dBm output power for AMPS operation
• +16 dBm Low Power TDMA operation
• High power added efficiency
• Two-stage design with partial on-chip imped-
ance matching
• On-chip VSWR protection
• Single power supply operation
• Low standby current: <2µA
• Built-in on/off function
• Small-outline, low profile package: QFN
• Low quiescent current
RFIN
1
GND
2
Iset_d
3
Iset_o
4
ON/OFF
5
16
GND
15
GND
14
RF OUT1
Bias
and
Logic
Network
13
RF OUT2
12
RF OUT3
11
GND
VCCA
6
VBB2
7
OP_FB
8
Package Base is GND
Description
The IBM3602022Q020 900MHz AMPS/TDMA
Power Amplifier (PA) is a single band, two-stage
power amplifier using IBM’s silicon germanium
(SiGe) BiCMOS technology to yield maximum effi-
ciency in wireless handset applications. The PA is
optimized for both AMPS (U.S. Analog Mobile
Phone System) and TDMA/IS-54 operations.
Advanced on-chip biasing technology ensures reli-
able performance in both operating modes. The
power amplifier also has a power down function to
extend battery life. On-chip VSWR protection allows
the power amplifier to pass industry-standard
ruggedness tests at full RF drive (+4dBm input) with
a 10:1 load VSWR at Vcc = 5Vdc.
The 900MHz AMPS/TDMA PA is available in a 20-
lead, 4mm low profile QFN package. The QFN
package incorporates partial impedance matching
for both the input and intermediate stages, with each
requiring only one off-chip matching element. The
output stage requires off-chip matching.
Ordering Information
To order samples of this product or a demonstration
board, visit the IBM Microelectronics Division Web
site at
Part Number
IBM3602022Q020
IBM3602022EVBA
Product
900 MHZ AMPS/TDMA PA
Evaluation Board
Note:
The 900MHz AMPS/TDMA Power Amplifier is susceptible
to damage from electrostatic discharge (ESD). Observe normal
ESD precautions at all times when handling or using the device.
December 19, 2001
GND
10
GND
9
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