PowerPC 405GP Embedded Processor Data Sheet
DC Electrical Characteristics
Parameter
Symbol
Minimum
Typical
TBD
550
730
TBD
35
Maximum
TBD
670
Unit
mA
mA
mA
mA
mA
mA
mA
W
Active Operating Current (V )–133MHz
I
DD
DD
Active Operating Current (V )–200MHz
I
DD
DD
Active Operating Current (V )–266 MHz
I
880
DD
DD
Active Operating Current (OV )–133MHz
I
TBD
37
DD
ODD
Active Operating Current (OV )–200MHz
I
DD
ODD
Active Operating Current (OV )–266 MHz
I
37
40
DD
ODD
PLL V Input current
I
16
23
DD
PLL
P
Active Operating Power–133MHz
Active Operating Power–200MHz
Active Operating Power–266MHz
Note:
TBD
1.5
TBD
DD
1
P
W
DD
2.0
1
P
2.0
W
2.6
DD
1. Maximum power is characterized at V = +2.7V, OV = +3.6V, T = +85°C, across the silicon process (worse case to best
DD
DD
C
case), while running an application designed to maximize power consumption. The specifications at 200MHz correspond to
CPU = 200 MHz, PLB = 100MHz, OPB = EBC = 50MHz, PCI = 33.3MHz. The specifications at 266MHz correspond to
CPU = 266.6MHz, PLB =133.3MHz, OPB = EBC = 66.6MHz, and PCI = 33.3MHz.
2. AV should be derived from V using the following circuit:
DD
DD
L1 – 2.2µH SMT inductor (equivalent to MuRata
LQH3C2R2M34) or SMT chip ferrite bead (equivalent
to MuRata BLM31A700S)
AV
V
DD
DD
L1
+
C1 – 3.3 µF SMT tantalum
C1
C2
C3
C2 – 0.1µF SMT monolithic ceramic capacitor with X7R
AGND
dielectric or equivalent
C3 – 0.01µF SMT monolithic ceramic capacitor with X7R
GND
dielectric or equivalent
Page 45 of 60
6/20/03
IBM [ IBM ]
