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IBM11S4325HM-70T 参数 Datasheet PDF下载

IBM11S4325HM-70T图片预览
型号: IBM11S4325HM-70T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 4MX32, 70ns, CMOS]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 22 页 / 209 K
品牌: IBM [ IBM ]
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IBM11S2325HP IBM11S4325HP  
IBM11S2325HM IBM11S4325HM  
2M/4M x 32 SO DIMM Module  
Extended Data Out Cycle  
-60  
-6R  
-70  
Symbol  
Parameter  
Units Notes  
Min. Max. Min. Max. Min. Max.  
10 10K 10 10K 12 10K  
tHCAS  
tHPC  
CAS Pulse Width (EDO Mode)  
ns  
ns  
ns  
ns  
ns  
ns  
EDO Mode Cycle Time (Read/Write)  
Data-out Hold Time from CAS  
25  
5
10  
35  
25  
5
10  
35  
30  
5
15  
40  
tDOH  
tWHZ  
tWPZ  
tCPRH  
tCPA  
Output buffer Turn-Off Delay from WE  
WE Pulse Width to Output Disable at CAS High  
RAS Hold Time from CAS Precharge  
Access Time from CAS Precharge  
EDO Mode RAS Pulse Width  
0
0
0
10  
35  
10  
35  
10  
40  
ns  
1
tRASP  
60 125K 60 125K 70 125K ns  
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.  
Refresh Cycle  
-60  
-6R  
-70  
Symbol  
tCHR  
Parameter  
Units Notes  
Min  
10  
Max  
Min  
10  
Max  
Min  
10  
Max  
CAS Hold Time  
ns  
ns  
ns  
(CAS before RAS Refresh Cycle)  
CAS Setup Time  
tCSR  
5
5
5
(CAS before RAS Refresh Cycle)  
WE Setup Time  
tWRP  
10  
10  
10  
10  
10  
10  
(CAS before RAS Refresh Cycle)  
WE Hold Time  
tWRH  
ns  
ns  
(CAS before RAS Refresh Cycle)  
tRPC  
tREF  
RAS Precharge to CAS Hold Time  
Refresh Period  
5
5
5
128  
128  
128  
ms  
1
1. 2048 refreshes are required every 128ms.  
Self Refresh Cycle  
-60  
-6R  
-70  
Symbol  
tRASS  
tRPS  
Parameter  
Units  
Notes  
1
Min.  
100  
Max.  
Min.  
Max.  
Min.  
100  
Max.  
RAS Pulse Width  
µs  
ns  
ns  
100  
110  
-50  
During Self Refresh Cycle  
RAS Precharge Time  
During Self Refresh Cycle  
CAS Hold Time  
104  
-50  
126  
-50  
1
tCHS  
1, 2  
During Self Refresh Cycle  
CAS Hold Time From RAS Falling  
During Self Refresh Cycle  
tCHD  
µs  
350  
350  
350  
1, 2  
1. When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM operation: If row  
addresses are being refreshed in a EVENLY DISTRIBUTED manner over the refresh interval using CBR refresh cycles, then only  
one CBR cycle must be performed immediately after exit from Self Refresh. If row addresses are being refreshed in any other  
manner (ROR - Distributed/Burst; or CBR-Burst) over the refresh interval, then a full set of row refreshes must be performed imme-  
diately before entry to and immediately after exit from Self Refresh.  
2. If tRASS > tCHD (min) then tCHD applies. If tRASS tCHD (min) then tCHS applies.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H1718  
SA14-4471-00  
Revised 4/96  
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