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IBM11S4325HM-70T 参数 Datasheet PDF下载

IBM11S4325HM-70T图片预览
型号: IBM11S4325HM-70T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 4MX32, 70ns, CMOS]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 22 页 / 209 K
品牌: IBM [ IBM ]
 浏览型号IBM11S4325HM-70T的Datasheet PDF文件第1页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第2页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第3页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第4页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第6页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第7页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第8页浏览型号IBM11S4325HM-70T的Datasheet PDF文件第9页  
IBM11S2325HP IBM11S4325HP  
IBM11S2325HM IBM11S4325HM  
2M/4M x 32 SO DIMM Module  
Absolute Maximum Ratings  
Rating  
Symbol  
Parameter  
Units  
Notes  
3.3 Volt  
5.0 Volt  
VCC  
VIN  
Power Supply Voltage  
Input Voltage  
-0.5 to + 4.6  
-1.0 to + 7.0  
V
V
1
1
-0.5 to min (VCC + 0.5, 4.6) -0.5 to min (VCC + 0.5, 7.0)  
-0.5 to min (VCC + 0.5, 4.6) -0.5 to min (VCC + 0.5, 7.0)  
VOUT  
TOPR  
TSTG  
PD  
Output Voltage  
V
1
°C  
°C  
W
mA  
Operating Temperature  
Storage Temperature  
Power Dissipation  
0 to +70  
-55 to +150C  
1.3 (4MB) 2.6 (8MB)  
50  
0 to +70  
-55 to +150C  
2.0 (4MB) 4.0 (8MB)  
50  
1
1
1, 2  
1
IOUT  
Short Circuit Output Current  
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional  
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-  
ods may affect reliability.  
2. Maximum power occurs when all banks are active.  
Recommended DC Operating Conditions (TA = 0 to 70°C)  
3.3 Volt  
Typ  
5.0 Volt  
Typ  
Symbol  
Parameter  
Min  
3.0  
Max  
3.6  
Min  
4.5  
Max  
5.5  
Units  
Notes  
1
VCC  
VIH  
VIL  
Supply Voltage  
3.3  
5.0  
V
V
V
V
CC + 0.5  
VCC + 0.5  
0.8  
Input High Voltage  
Input Low Voltage  
2.0  
2.4  
1, 2  
1, 2  
-0.5  
0.8  
-0.5  
1. All voltages referenced to VSS  
.
2. VIH may overshoot to VCC + 1.2V for pulse widths of 4.0ns with 3.3 Volt, or VCC + 2.0V for pulse widths of 4.0ns (or VCC + 1.0V  
for 8.0ns) with 5.0 Volt. Additionally, VIL may undershoot to -2.0V for pulse widths 4.0ns (or -1.0V for 8.0ns). Pulse widths  
measured at 50% points with amplitude measured peak to DC reference.  
Capacitance (TA = 0 to +70°C, VCC = 3.3± 0.3V or 5.0 ± 0.25V)  
2M x 32  
Max  
4M x 32  
Max  
Symbol  
Parameter  
Units  
CI1  
CI2  
CI2  
CI4  
CI5  
CIO  
Input Capacitance (A0-A9)  
38  
24  
24  
14  
40  
15  
58  
24  
24  
21  
68  
22  
pF  
pF  
pF  
pF  
pF  
pF  
Input Capacitance (4MB: RAS0, 8MB: RAS0, 1)  
Input Capacitance (4MB: RAS2, 8MB: RAS2, 3)  
Input Capacitance (CAS)  
Input Capacitance (WE)  
Input - Output Capacitance (DQ0-DQ34)  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H1718  
SA14-4471-00  
Revised 4/96  
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