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IBM11S1325LP-60T 参数 Datasheet PDF下载

IBM11S1325LP-60T图片预览
型号: IBM11S1325LP-60T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 1MX32, 60ns, CMOS]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 22 页 / 603 K
品牌: IBM [ IBM ]
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Discontinued (9/98 - last order; 3/99 last ship)
IBM11S2325LP IBM11S1325LP
1M/2M x 32 SO DIMM Module
DC Electrical Characteristics
Symbol
(T
A
= 0 to +70C, V
CC
= 3.3
±
0.3V)
1Mx32
2Mx32
Units
Min
Max
210
Min
Max
210
mA
Notes
Parameter
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
RC
= t
RC
min)
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS
≥V
IH
)
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS
≥V
IH
: t
RC
= t
RC
min)
EDO Mode Current
Average Power Supply Current, Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = V
CC
- 0.2V)
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: t
RC
= t
RC
min)
Self Refresh Current
Average Power Supply Current during Self Refresh
(CBR Cycle with RAS
t
RASS
(min))
Input Leakage Current
Input Leakage Current, any input
(0.0
V
IN
(V
CC
< 6.0V))
All Other Pins Not Under Test = 0V
Output Leakage Current
(D
OUT
is disabled, 0.0
V
OUT
V
CC
)
Output High Level
Output "H" Level Voltage (I
OUT
= -2mA @ 2.4V)
Output Low Level
Output "L" Level Voltage (I
OUT
= +2mA @ 0.4V)
RAS
CAS
Add &
WE
I
CC1
I
CC2
2
4
mA
I
CC3
210
210
mA
1, 3, 4
I
CC4
80
80
mA
1, 2, 3
I
CC5
.2
.4
mA
I
CC6
210
210
mA
1, 3, 4
I
CC7
-5
-5
-10
-5
2.4
400
+5
+5
+10
+5
0.4
-5
-10
-20
-10
2.4
400
+5
+10
+20
+10
0.4
µA
4
I
I(L)
µA
I
O(L)
V
OH
V
OL
µA
V
V
1.
2.
3.
4.
I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on cycle rate.
I
CC1
, I
CC4
depend on output loading. Specified values are obtained with the output open.
Address can be changed once or less while RAS = V
IL
. In the case of I
CC4
, it can be changed once or less when CAS = V
IH
.
Refresh current is specified for one bank
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H1720
SA14-4472-01
Revised 6/97
Page 6 of 22