Discontinued (9/98 - last order; 3/99 last ship)
IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au.
IBM11S1325LP IBM11S2325LP
1M/2M x 32 SO DIMM Module
Features
• 72-Pin Small Outline Dual-In-Line
Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
t
RC
Access Time From Address
Cycle Time
60ns
15ns
30ns
104ns
25ns
•
•
•
•
•
•
•
•
•
•
t
HPC
EDO Mode Cycle Time
High Performance CMOS process
Single 3.3
±
0.3V Power Supply
Low active current consumption
All inputs & outputs are LVTTL(3.3V) compatible
Extended Data Out (EDO) access cycle
Refresh Modes: RAS-Only, CBR, Hidden and
Self Refresh
1024 refresh cycles distributed across 128ms
10/10 Addressing (Row/Column)
Optimized for use in byte-write non-parity appli-
cations.
Au contacts
Description
The IBM11S2325LP is an 8MB industry standard
72-pin 4-byte small outline dual in-line memory
module (SO DIMM). The module is organized as a
2Mx32 dual bank high speed memory array that is
intended for use in 16, 32 and 64 bit applications. It
is manufactured with four 1Mx16 TSOP devices,
each in a 400mil package.
The IBM11S1325LP is a 4MB half populated ver-
sion, manufactured with two 1Mx16 TSOP devices
and is organized as a single bank 1Mx32 high
speed memory array.
The use of EDO DRAMs allows for a reduction in
cycle time from 40ns (Fast Page) to 25ns (EDO,
60ns sort). The use of TSOP packages allows for
tight DIMM spacing (.3” on center). Input loading is
consistent with 4Mb device-based assemblies due
to the addition of discrete capacitors maximizing
compatibility at the system level.
These assemblies are intended for use in space
constrained and or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
Card Outline
(Front) 1
(Back) 2
71
72
75H1720
SA14-4472-01
Revised 6/97
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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