IBM11M4730H
IBM11M4730HB
4M x 72 DRAM MODULE
Fast Page Mode Cycle
-60
-70
Symbol
Parameter
Fast Page Mode Cycle Time
Unit
Notes
Min
40
60
40
—
Max
—
Min
45
70
45
—
Max
—
tPC
ns
ns
ns
ns
tRASP
tCPRH
tCPA
Fast Page Mode RAS Pulse Width
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
100K
—
100K
—
40
45
1, 2
1. Measured with the specified current load and 100pF.
2. Access time is determined by the latter of tRAC, tCAC, tCPA, tAA, tOEA
.
Read-Modify-Write Cycle
-60
-70
Symbol
Parameter
Read-Modify-Write Cycle Time
Unit
Notes
Min
158
83
Max
—
Min
188
98
Max
—
tRWC
tRWD
tCWD
tAWD
tOEH
ns
ns
ns
ns
ns
RAS to WE Delay Time
—
—
1
1
1
CAS to WE Delay Time
45
—
55
—
Column Address to WE Delay Time
OE Command Hold Time
58
—
68
—
15
—
15
—
1. tWCS, tRWD, tCWD, tAWD, and tCPW are not restrictive parameters. They are included in the data sheet as electrical characteristics
only. If tWCS ≥ tWCS(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through
the entire cycle; If tRWD ≥ tRWD(min.), tCWD ≥ tCWD(min.), tAWD ≥ tAWD(min.) and tCPW ≥ tCPW(min.)(Fast Page Mode), the cycle is a
Read-Modify-Write cycle and the data will contain read from the selected cell: If neither of the above sets of conditions are met, the
condition of the data (at access time) is indeterminate.
Fast Page Mode Read-Modify-Write Cycle
-60
-70
Symbol
Parameter
Unit
Min
83
Max
—
Min
98
Max
—
tPRWC
tCPW
Fast Page Mode Read-Modify-Write Cycle Time
WE Delay time from CAS Precharge
ns
ns
63
—
73
—
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
54H8529
SA14-4637-01
Released 3/96
Page 10 of 26
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