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IBM0625404GT3B-10E 参数 Datasheet PDF下载

IBM0625404GT3B-10E图片预览
型号: IBM0625404GT3B-10E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 75 页 / 1245 K
品牌: IBM [ IBM ]
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IBM0625404GT3B IBM0625164GT3B  
IBM0625804GT3B IBM06254B4GT3B  
256Mb Double Data Rate Synchronous DRAM  
Advance  
Data Input (Write) (Timing Burst Length = 4)  
tDSL  
tDSH  
DQS  
tDH  
tDS  
DI n  
DQ  
tDH  
tDS  
DM  
DI n = Data In for column n.  
3 subsequent elements of data in are applied in programmed order following DI n.  
Don’t Care  
Data Output (Read) (Timing Burst Length = 4)  
tDQSQ min  
tDQSQ nom  
DQS  
tDQSQ max  
tDQSQ nom  
tDQSQ max  
tDQSQ min  
DQ  
tDV  
DQS and DQ  
Data Valid Window  
t
t
t
occurs when DQS is the earliest among DQS and DQ signals to transition.  
occurs when DQS is the latest among DQS and DQ signals to transition.  
, shown for reference, occurs when DQS transitions in the center among DQ signal transitions.  
DQSQ max  
DQSQ min  
DQSQ nom  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997  
10/99  
Page 60 of 75  
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