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IBM0612805GT3B-75N 参数 Datasheet PDF下载

IBM0612805GT3B-75N图片预览
型号: IBM0612805GT3B-75N
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 79 页 / 1362 K
品牌: IBM [ IBM ]
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IBM0612404GT3B  
IBM0612804GT3B  
Advance Rev 0.2  
128Mb Double Data Rate Synchronous DRAM  
Block Diagram (16Mb x 8)  
CKEn  
CK  
QFC  
generator  
QFC  
(Optional)  
DRVR  
CK  
CSn  
WE  
CAS  
RAS  
Bank3  
Bank2  
Bank1  
Clk  
DLL  
Mode  
Registers  
12  
4096  
Bank0  
Memory  
Array  
12  
Data  
1
(4096 x 512 x 16)  
8
8
8
16  
Sense Amplifiers  
DQS  
Generator  
DQ0-DQ7,  
DM  
COLo  
Mask  
DQS  
Input  
Register  
1
I/O Gating  
DM Mask Logic  
16  
2
DQS  
1
A0-A11,  
BA0, BA1  
Write  
14  
1
8
FIFO  
1
1
&
16  
2
16  
512  
(x8)  
2
Drivers  
8
8
8
8
clk  
clk  
Column  
Decoder  
in  
out  
Data  
9
COLo  
Clk  
Column-Address  
Counter/Latch  
10  
COLo  
1
1
Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of  
the device; it does not represent an actual circuit implementation.  
Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-  
rectional DQ and DQS signals.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
06K0566.F39350  
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