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IBM0418A81BLAB-5 参数 Datasheet PDF下载

IBM0418A81BLAB-5图片预览
型号: IBM0418A81BLAB-5
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX18, 2.25ns, CMOS, PBGA119, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 25 页 / 139 K
品牌: IBM [ IBM ]
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IBM0418A81BLAB IBM0436A81BLAB  
IBM0418A41BLAB IBM0436A41BLAB  
8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM  
Preliminary  
AC Test Conditions T(A = 0 to +85°C, VDD = 2.5V -5%, +5%, VDDQ = 1.5, 1.8 V)  
Parameter  
Output Driver Supply Voltage  
Symbol  
Conditions  
1.5, 1.8  
1.5  
Units  
V
Notes  
V
DDQ  
V
Input High Level  
V
IH  
V
Input Low Level  
0.3  
V
IL  
V
Input Reference Voltage  
Differential Clocks Voltage  
Clocks Common Mode Voltage  
Input Rise Time  
0.75, 0.90  
0.75  
V
REF  
V
V
DIF-CLK  
CM-CLK  
V
0.75, 0.9  
0.5  
V
T
ns  
R
T
Input Fall Time  
0.5  
0.9  
ns  
V
F
I/O Signals Reference Level (except K, C Clocks)  
Clocks Reference Level  
Differential Cross Point  
V
1, 2  
Output Load Conditions  
1. See the AC Test Loading figure below.  
2. Parameter tested with RQ = 250and V  
= 1.8 V.  
DDQ  
AC Test Loading  
50  
0.75, 0.9V  
50  
5pF  
0.9V  
25  
DQ  
50  
0.75, 0.9V  
50  
5pF  
crrh2519.07  
12/13/00  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
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