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IBM0364804PT3B-360 参数 Datasheet PDF下载

IBM0364804PT3B-360图片预览
型号: IBM0364804PT3B-360
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 72 页 / 1201 K
品牌: IBM [ IBM ]
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Discontinued (8/99 - last order; 12/99 - last ship)  
IBM0364804 IBM0364164  
IBM0364404 IBM03644B4  
64Mb Synchronous DRAM - Die Revision B  
Command Truth Table (See note 1)  
CKE  
A12,  
A13  
A11, A9-  
A0  
Function  
Device State  
CS RAS CAS WE  
DQM  
A10  
Notes  
Previous Current  
Cycle  
Cycle  
Mode Register Set  
Auto (CBR) Refresh  
Entry Self Refresh  
Idle  
Idle  
Idle  
H
H
H
X
H
L
L
L
L
H
L
L
L
L
L
L
H
H
X
H
X
X
X
OP Code  
X
X
X
X
X
X
L
L
X
H
X
H
Idle (Self-  
Refresh)  
Exit Self Refresh  
L
H
X
X
X
X
See Current  
State Table  
Single Bank Precharge  
Precharge all Banks  
H
H
X
X
L
L
L
L
H
H
L
L
X
X
BS  
X
L
X
X
2
See Current  
State Table  
H
Bank Activate  
Write  
Idle  
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
L
H
L
H
L
X
X
X
X
X
X
X
X
BS  
BS  
BS  
BS  
BS  
X
Row Address  
2
2
Active  
H
H
H
H
H
H
X
L
H
L
Column  
Column  
Column  
Column  
X
Write with Auto-Precharge Active  
Read Active  
Read with Auto-Precharge Active  
L
L
2
L
H
H
L
2
L
H
X
X
X
2
Burst Termination  
No Operation  
Active  
Any  
H
H
X
3, 8  
H
X
X
X
Device Deselect  
Any  
X
X
Clock Suspend Mode  
Entry  
Active  
H
L
X
X
X
X
X
X
X
X
4
5
Clock Suspend Mode Exit Active  
Data Write/Output Enable Active  
Data Mask/Output Disable Active  
L
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
X
H
1. All of the SDRAM operations are defined by states of CS, WE, RAS, CAS, and DQM at the positive rising edge of the clock.Oper-  
ation of both decks of a stacked device at the same time is allowed, depending on the operation being performed on the other  
deck. Refer to the Current State Truth Table.  
2. Bank Select (BS0, BS1): BS0, BS1 = 0,0 selects bank 0; BS0, BS1 = 0,1 selects bank 1; BS0, BS1 = 1,0 selects bank 2; BS0, BS1  
= 1,1 selects bank 3.  
3. During a Burst Write cycle there is a zero clock delay, for a Burst Read cycle the delay is equal to the CAS latency.  
4. During normal access mode, CKE is held high and CLK is enabled. When it is low, it freezes the internal clock and extends data  
Read and Write operations. One clock delay is required for mode entry and exit.  
5. The DQM has two functions for the data DQ Read and Write operations. During a Read cycle, when DQM goes high at a clock tim-  
ing the data outputs are disabled and become high impedance after a two clock delay. DQM also provides a data mask function for  
Write cycles. When it activates, the Write operation at the clock is prohibited (zero clock latency).  
6. All banks must be precharged before entering the Power Down Mode.(If this command is issued during a burst operation, the  
device state will be Clock Suspend Mode.)The Power Down Mode does not perform any refresh operations, therefore the device  
can’t remain in this mode longer than the Refresh period (tREF) of the device. One clock delay is required for mode entry and exit.  
7. A No Operation or Device Deselect command is required on the next clock edge following CKE going high.  
8. Device state is full page burst operation. Use of this command to terminate other burst length operations is illegal.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
19L3264.E35855A  
1/28/99  
 
 
 
 
 
 
 
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