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IBM0316809CT3D-10 参数 Datasheet PDF下载

IBM0316809CT3D-10图片预览
型号: IBM0316809CT3D-10
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 120 页 / 1896 K
品牌: IBM [ IBM ]
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Discontinued (12/98 - last order; 9/99 last ship)  
IBM0316409C IBM0316809C IBM0316169C  
IBM03164B9C  
16Mb Synchronous DRAM-Die Revision D  
Command Truth Table (Notes: 1)  
CKE  
Function  
CS  
RAS  
CAS  
WE  
DQM A11  
A10  
A9 - A0  
Notes  
Previous Current  
Cycle  
H
H
H
L
Cycle  
Mode Register Set  
Auto (CBR) Refresh  
Entry Self Refresh  
Exit Self Refresh  
X
L
L
L
H
L
L
L
L
L
L
L
L
L
H
X
X
X
X
X
L
L
L
L
L
H
H
X
L
X
OP Code  
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
L
X
X
X
X
X
L
L
H
X
X
L
X
H
H
H
L
X
Single Bank Precharge  
Precharge all Banks  
Bank Activate  
H
H
H
H
H
H
H
H
H
H
L
BS  
X
2
X
L
L
H
X
L
H
L
BS  
BS  
BS  
BS  
BS  
X
Row Address  
2
2
2
2
2
3
Write  
X
H
H
H
H
H
H
X
X
X
X
X
X
L
H
L
Column  
Write with Auto-Precharge  
Read  
X
L
L
Column  
X
L
H
H
L
Column  
Read with Auto-Precharge  
Burst Termination  
X
L
H
X
X
X
X
X
X
X
X
Column  
X
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
No Operation  
X
H
X
X
X
X
X
X
X
Device Deselect  
X
X
Clock Suspend/Standby Mode  
Data Write/Output Enable  
Data Mask/Output Disable  
Power Down Mode Entry  
Power Down Mode Exit  
X
X
4
5
H
H
X
X
X
X
H
X
X
X
5
L
X
6, 7  
6, 7  
X
H
X
1. All of the SDRAM operations are defined by states of CS, WE, RAS, CAS, and DQM at the positive rising edge of the clock. For  
stacked devices: only one deck can be operated at once, except during Self Refresh.  
2. Bank Select (BS), if BS = 0 then bank A is selected, if BS = 1 then bank B is selected.  
3. During a Burst Write cycle there is a zero clock delay, for a Burst Read cycle the delay is equal to the CAS latency.  
4. During normal access mode, CKE is held high and CLK is enabled. When it is low, it freezes the internal clock and extends data  
Read and Write operations. One clock delay is required for mode entry and exit.  
5. The DQM has two functions for the data DQ Read and Write operations. During a Read cycle, when DQM goes high at a clock tim-  
ing the data outputs are disabled and become high impedance after a two clock delay. DQM also provides a data mask function for  
Write cycles. When it activates, the Write operation at the clock is prohibited (zero clock latency).  
6. All banks must be precharged before entering the Precharge Power Down Mode. If banks are active, Active Power Down Mode is  
entered. The Power Down Mode does not perform any refresh operations, therefore the device can’t remain in this mode longer  
than the Refresh period (tREF) of the device. One clock delay is required for mode entry and exit.  
7. If CS is low, then when CKE returns high, no command is registered into the chip for one clock cycle.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
08J3348.E35853  
5/98  
 
 
 
 
 
 
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