ADVANCED
IBM0165805B
IBM0165805P
8M x 8 12/11 EDO DRAM
Truth Table
Function
Standby
Read
Early-Write
Delayed-Write
Read-Modify-Write
EDO (Hyper Page) Mode
Read
EDO (Hyper Page) Mode
Write
EDO (Hyper Page) Mode
Read-Modify-Write
RAS-Only Refresh
CAS-Before-RAS Refresh
Read
Hidden Refresh
Write
Self Refresh (LP version only)
L→H→L
H→L
L
L
H
H
X
X
Row
X
Col.
X
Data In
High Impedance
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
1st Cycle
2nd Cycle
RAS
H
L
L
L
L
L
L
L
L
L
L
L
H→L
L→H→L
CAS
H→X
L
L
L
L
H→L
H→L
H→L
H→L
H→L
H→L
H
L
L
WE
X
H
L
H→L
H→L
H
H
L
L
H→L
H→L
X
H
H
OE
X
L
X
H
L→H
L
L
X
X
L→H
L→H
X
X
L
Row
Column
Address Address
X
Row
Row
Row
Row
Row
N/A
Row
N/A
Row
N/A
Row
X
Row
X
Col.
Col.
Col.
Col.
Col.
Col.
Col.
Col.
Col.
Col.
N/A
N/A
Col.
I/O0 - I/O7
High Impedance
Data Out
Data In
Data In
Data Out, Data In
Data Out
Data Out
Data In
Data In
Data Out, Data In
Data Out, Data In
High Impedance
High Impedance
Data Out
27H6251
SA14-4241-02
10/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
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