ADVANCED
IBM0165805B
IBM0165805P
8M x 8 12/11 EDO DRAM
Read-Modify-Write Cycle
-50
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
Parameter
Min.
Read-Modify-Write Cycle Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
OE Command Hold Time
109
65
28
40
7
Max.
—
—
—
—
—
Min.
135
79
34
49
10
Max.
—
—
—
—
—
ns
ns
ns
ns
ns
1
1
1
-60
Units
Notes
1. t
WCS
, t
RWD
, t
CWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are included in the data sheet as electrical charac-
teristics only. If t
WCS
≥
t
WCS
(min.), the cycle is an early write cycle and the data pin will remain open circuit (high impedance)
through the entire cycle. If t
RWD
≥
t
RWD
(min.), t
CWD
≥
t
CWD
(min.), t
AWD
≥
t
AWD
(min.), and t
CPWD
≥
t
CPWD
(min.)(Fast Page Mode), the
cycle is a Read-Modify-Write cycle and the data out will contain data read from the selected cell. If neither of the above sets of con-
ditions is satisfied, the condition of the data out (at access time) is indeterminate.
Extended Data Out (Hyper Page) Mode Cycle
-50
Symbol
t
HCAS
t
HPC
t
HPRWC
t
DOH
t
WHZ
t
WPZ
t
CPRH
t
CPA
t
RASP
t
OEP
t
OEHC
Parameter
Min.
CAS Pulse Width (Hyper Page Mode)
Hyper Page Mode Cycle Time (Read/Write)
Hyper Page Mode Read Modify Write Cycle Time
Data-out Hold Time from CAS
Output buffer Turn-Off Delay from WE
WE Pulse Width to Output Disable at CAS High
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
Hyper Page Mode RAS Pulse Width
OE High Pulse Width
OE High Hold Time from CAS High
8
20
54
5
0
7
27
—
50
5
5
Max.
100K
—
—
—
10
—
—
27
200K
—
—
Min.
10
25
66
5
0
10
35
—
60
10
10
Max.
10K
—
—
—
10
—
—
35
200K
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
-60
Units
Notes
1. Measured with the specified current load and 100pF at V
OL
= 0.8V and V
OH
= 2.0V.
27H6251
SA14-4241-02
10/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 32
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