IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO.
ADVANCED
Features
• 8,388,608 word by 8 bit organization
• Single 3.3
±
0.3V power supply
• Extended Data Out (Hyper Page Mode)
• CAS before RAS Refresh
- 4096 cycles/Retention Time
• RAS only Refresh
- 4096 cycles/Retention Time
• 64ms Standard Power (SP) Retention Time
• 256ms Low Power (LP) Retention Time
• Hidden Refresh
• Self Refresh (400µA) - LP Version Only
t
RAC
t
CAC
t
AA
t
RC
t
HPC
IBM0165805B
IBM0165805P
8M x 8 12/11 EDO DRAM
• Read-Modify-Write
• Performance:
-50
RAS Access Time
CAS Access Time
Column Address Access Time
Cycle Time
Hyper Page Mode Cycle Time
50ns
13ns
25ns
84ns
20ns
-60
60ns
15ns
30ns
104ns
25ns
• Max. Power Dissipation (-60)
- Active: 414mW
- Standby (SP LVCMOS): 3.6mW
- Standby (LP LVCMOS): 0.72mW
• Package: SOJ-32 (400mil), TSOP-32 (400mil)
Description
The IBM0165805B/P is a dynamic RAM organized
8,388,608 words by 8 bits. This device is fabricated
in IBM’s most advanced CMOS silicon gate process
technology. The circuit and process design allow
this DRAM to achieve high performance and low
power dissipation. The IBM0165805B/P operates
with a single 3.3
±
0.3V power supply, and inter-
faces directly with either LVTTL or LVCMOS levels.
The 23 addresses required to access any bit of data
are multiplexed (12 are strobed with RAS, 11 are
strobed with CAS). They are packaged in a 32 pin
plastic SOJ (400mil×825mil), and a 32pin plastic
TSOP type II (400mil×825mil).The IBM0165805P
parts are low power devices supporting Self
Refresh and a 256ms retention time.
Pin Assignments
(Top View)
VCC
I/O0
I/O1
I/O2
I/O3
NC
VCC
WE
RAS
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VSS
I/O7
I/O6
I/O5
I/O4
VSS
CAS
OE
NC
A11
A10
A9
A8
A7
A6
VSS
Pin Description
RAS
CAS
WE
A0 - A11
OE
I/O0 - I/O7
V
CC
V
SS
Row Address Strobe
Column Address Strobe
Read/write Input
Address Inputs
Output Enable
Data Input/output
Power (+3.3V)
Ground
27H6251
SA14-4241-02
10/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
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