IBM0118165M IBM0118165
IBM0118165P IBM0118165B
1M x 16 10/10 EDO DRAM
Write Cycle
-50
Max.
-60 / -6R
-70
Max.
Symbol
Parameter
Units
Notes
1
Min.
0
Min.
Max.
—
Min.
0
tWCS
tWCH
tWP
Write Command Set Up Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
DIN Setup Time
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
7
10
10
10
10
0
—
12
12
12
12
0
7
—
tRWL
tCWL
tDS
7
—
7
—
0
—
2
2
tDH
DIN Hold Time
7
10
—
12
1. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics
only. If tWCS ≥ tWCS (min), the cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle. If tRWD ≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a Read-Modify-Write cycle and the data out
will contain data read from the selected cell. If neither of the above sets of conditions are satisfied, the condition of the data out (at
access time) is indeterminate.
2. These parameters are referenced to LCAS or UCAS leading edge in early write cycles and to WE leading edge in Read-Modify-
Write cycles.
©IBM Corporation, 1995. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4721
SA14-4223-01
Revised 12/95
Page 8 of 32
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