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IBM0118165BT3-70 参数 Datasheet PDF下载

IBM0118165BT3-70图片预览
型号: IBM0118165BT3-70
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 350 K
品牌: IBM [ IBM ]
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IBM0118165 IBM0118165M  
IBM0118165B IBM0118165P  
1M x 16 10/10 EDO DRAM  
Absolute Maximum Ratings  
Rating  
Symbol  
Parameter  
Units Notes  
3.3 Volt Device  
-0.5 to +4.6  
5.0 Volt Device  
VCC  
VIN  
Power Supply Voltage  
Input Voltage  
-1.0 to +7.0  
V
V
1
1
1
1
1
1
1
-0.5 to min (VCC+0.5, 4.6)  
-0.5 to min (VCC+0.5, 4.6)  
0 to +70  
-0.5 to min (VCC+0.5, 7.0)  
VOUT  
TOPR  
TSTG  
PD  
-0.5 to min (VCC+0.5, 7.0)  
Output Voltage  
V
°C  
°C  
W
mA  
Operating Temperature  
Storage Temperature  
Power Dissipation  
0 to +70  
-55 to +150  
1.0  
-55 to +150  
1.0  
IOUT  
Short Circuit Output Current  
50  
50  
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-  
ability.  
Recommended DC Operating Conditions (T = 0 to 70˚C)  
A
3.3 Volt Device  
5.0 Volt Device  
Symbol  
Parameter  
Units  
Notes  
Min.  
3.0  
Typ.  
3.3  
Max.  
3.6  
Min.  
4.5  
Typ.  
5.0  
Max.  
5.5  
VCC  
VIH  
VIL  
Supply Voltage  
V
V
V
1
V
CC + 0.5  
0.8  
VCC + 0.5  
0.8  
Input High Voltage  
Input Low Voltage  
2.0  
2.4  
1, 2  
1, 2  
-0.5  
-0.5  
1. All voltages referenced to VSS  
.
2. VIH may overshoot to VCC + 1.2V for pulse widths of 4.0ns with 3.3 Volt, or VCC + 2.0V for pulse widths of 4.0ns (or VCC + 1.0V  
for 8.0ns) with 5.0 Volt. Additionally, VIL may undershoot to -2.0V for pulse widths 4.0ns with 3.3 Volt, or to -2.0V for pulse  
widths 4.0ns (or -1.0V for 8.0ns) with 5.0 Volt. Pulse widths measured at 50% points with amplitude measured peak to DC ref-  
erence.  
Capacitance (T = 25°C, V = 3.3V ± 0.3V or V = 5.0V ± 0.5V)  
A
CC  
CC  
Symbol  
CI1  
Parameter  
Input Capacitance (A0 - A9)  
Min.  
Max.  
Units  
pF  
Notes  
5
7
7
1
1
1
CI2  
Input Capacitance (RAS, LCAS, UCAS, WE, OE)  
Output Capacitance (I/O0 - I/O15)  
pF  
CO  
pF  
1. Input capacitance measurements made with rise time shift method with CAS & RAS = VIH to disable output.  
©IBM Corporation, 1995. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4721  
SA14-4223-01  
Revised 12/95  
Page 5 of 32  
 
 
 
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