IBM0117805
IBM0117805M
IBM0117805B IBM0117805P
2M x 8 11/10 EDO DRAM
Read-Modify-Write Cycle
-50
Max.
-60
Max.
-6R
Max.
-70
Max.
Symbol
Parameter
Units
Notes
Min.
115
67
Min.
135
79
Min.
135
79
Min.
162
94
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
1
1
1
CAS to WE Delay Time
30
34
36
44
Column Address to WE Delay Time
OE Command Hold Time
42
49
49
59
7
10
10
12
1. tWCS, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics
only. If tWCS ≥ tWCS (min), the cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle. If tRWD ≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a Read-Modify-Write cycle and the data out
will contain data read from the selected cell. If neither of the above sets of conditions are satisfied, the condition of the data out (at
access time) is indeterminate.
Extended Data Out (Hyper Page) Mode Cycle
-50
-60 / -6R
-70
Symbol
Parameter
Units
Notes
Min. Max. Min. Max. Min. Max.
tHCAS
tHPC
EDO (Hyper Page) Mode CAS Pulse Width
8
10K
—
10
25
10K
—
12
30
10K
—
ns
ns
EDO (Hyper Page) Mode Cycle Time (Read/Write)
20
EDO (Hyper Page) Mode Read Modify Write Cycle
Time
tHPRWC
51
—
60
—
72
—
ns
tDOH
tWHZ
tWPZ
tCPRH
tCPA
Data-out Hold Time from CAS
5
0
—
10
5
0
—
10
5
0
—
15
ns
ns
ns
ns
ns
ns
ns
ns
Output buffer Turn-Off Delay from WE
WE Pulse Width to Output Disable at CAS High
RAS Hold Time from CAS Precharge
Access Time from CAS Precharge
EDO (Hyper Page) Mode RAS Pulse Width
OE Precharge
7
—
10
35
—
60
5
—
10
40
—
70
5
—
30
—
50
5
—
—
—
28
35
40
1
tRASP
tOEP
200K
—
200K
—
200K
—
tOEHC
OE High Hold Time from CAS High
5
—
5
—
5
—
1. Measured with the specified current load and 100pF at VOL = 0.8V and VOH = 2.0V.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4724
SA14-4221-04
Revised 11/96
Page 10 of 29
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