IBM01164B0
IBM01164D0
4M x 4 Stacked DRAM
DC Electrical Characteristics (T = 0 to +70˚C, V = 3.3V ± 0..3V or V = 5.0V ± 0..5V )
A
CC
CC
Min.
—
Symbol
Parameter
Max.
75
Units
mA
Notes
1, 2, 3
-60
-70
Operating Current
ICC1
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: tRC = tRC min.)
—
65
Standby Current (TTL)
Power Supply Standby Current
(RAS = CAS = VIH)
ICC2
ICC3
ICC4
ICC5
ICC6
II(L)
—
1
mA
mA
4
1, 3
1, 2, 3
4
-60
-70
-60
-70
—
—
—
—
75
65
65
55
RAS Only Refresh Current
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS = VIH: tRC = tRC min)
Fast Page Mode Current
Average Power Supply Current, Fast Page Mode
(RAS = VIL, CAS, Address Cycling: tPC = tPC min)
mA
mA
mA
µA
Standby Current (CMOS)
Power Supply Standby Current
(RAS = CAS = VCC - 0.2V)
—
—
1
-60
-70
75
65
CAS Before RAS Refresh Current
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS, Cycling: tRC = tRC min)
1, 3
Input Leakage Current
Input Leakage Current, any input
(0.0 ≤ VIN ≤ (VCC + 0.3V)), All Other Pins Not Under Test = 0V
-5
+5
4
4
Output Leakage Current
(DOUT is disabled, 0.0 ≤ VOUT ≤ VCC
IO(L)
VOH
VOL
µA
V
-5
+5
VCC
0.4
)
Output Level (TTL)
Output “H” Level Voltage, IOUT = -2.0mA
2.4
0.0
Output Level (TTL)
Output “L” Level Voltage, IOUT = +2.0mA
V
1. ICC1, ICC3, ICC4 and ICC6 depend on cycle rate.
2. ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open.
3. Address can be changed once or less while RAS =VIL. In the case of ICC4, it can be changed once or less when CAS =VIH.
4. Multiply given planar values by 2 or by 4 for 2 or 4 High stacked DRAM, respectively.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
28H4727
GA14-4248-01
Revised 11/96
Page 5 of 24
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