欢迎访问ic37.com |
会员登录 免费注册
发布采购

HY57V283220T-7 参数 Datasheet PDF下载

HY57V283220T-7图片预览
型号: HY57V283220T-7
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行X 1M X 32位同步DRAM [4 Banks x 1M x 32Bit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 914 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号HY57V283220T-7的Datasheet PDF文件第7页浏览型号HY57V283220T-7的Datasheet PDF文件第8页浏览型号HY57V283220T-7的Datasheet PDF文件第9页浏览型号HY57V283220T-7的Datasheet PDF文件第10页浏览型号HY57V283220T-7的Datasheet PDF文件第11页浏览型号HY57V283220T-7的Datasheet PDF文件第12页浏览型号HY57V283220T-7的Datasheet PDF文件第14页浏览型号HY57V283220T-7的Datasheet PDF文件第15页  
HY57V283220(L)T(P) / HY5V22(L)F(P)  
COMMAND TRUTH TABLE  
A10/  
AP  
ADDR  
Command  
CKEn-1  
CKEn  
CS  
RAS  
CAS  
WE  
DQM  
BA  
Note  
Mode Register Set  
H
H
H
H
X
L
H
L
L
X
H
L
L
X
H
H
L
X
H
H
X
OP code  
No Operation  
X
X
X
X
X
X
X
Bank Active  
L
RA  
V
V
Read  
L
H
L
L
L
H
H
L
L
L
H
L
CA  
CA  
X
Read with Autoprecharge  
Write  
H
H
X
X
X
V
Write with Autoprecharge  
Precharge All Banks  
Precharge selected Bank  
Burst Stop  
H
H
L
X
V
X
X
L
L
H
H
L
L
H
H
H
H
X
L
X
V
X
X
X
X
DQM  
Auto Refresh  
H
X
L
L
L
L
L
H
L
A9 Pin High  
(Other Pins OP code)  
Burst-Read-Single-WRITE  
H
H
L
X
X
3
Entry  
L
H
L
L
X
H
X
H
X
H
X
V
L
X
H
X
H
X
H
X
V
H
X
H
X
H
X
H
X
V
Self Refresh1  
X
Exit  
Entry  
Exit  
L
H
L
H
L
X
X
X
H
L
Precharge power  
down  
X
X
H
L
H
H
L
Entry  
Exit  
H
L
L
X
X
Clock  
Suspend  
H
X
Note :  
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high  
2. X = Don¢t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,  
Opcode = Operand Code, NOP = No Operation  
3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.  
Rev. 0.9 / July 2004  
13