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HY29F002TT-55 参数 Datasheet PDF下载

HY29F002TT-55图片预览
型号: HY29F002TT-55
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256K ×8 ) , 5伏只,闪存 [2 Megabit (256K x 8), 5 Volt-only, Flash Memory]
分类和应用: 闪存
文件页数/大小: 38 页 / 381 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY29F002T  
AC CHARACTERISTICS  
PA for Program  
SA for Sector Erase  
0x555 for Chip Erase  
0x555 for Program  
0x2AA for Erase  
Addresses  
VA  
tW C  
tAS  
tAH  
WE#  
OE#  
CE#  
tGHEL  
tW H  
tCP  
tCPH  
tW H W H 1 or tW H W H 2 or tW H W H 3  
tW S  
tDS  
tDH  
Data  
Status  
DOUT  
0xA0 for Program  
0x55 for Erase  
PD for Program  
0x30 for Sector Erase  
0x10 for Chip Erase  
tRH  
RESET#  
Notes:  
1. PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write  
Operation Status section), DOUT = array data read at VA.  
2. Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.  
3. Word mode addressing shown.  
4. RESET# shown only to illustrate tRH measurement references. It cannot occur as shown during a valid command  
sequence.  
Figure 23. Alternate CE# Controlled Write Operation Timings  
Rev. 4.1/May 01  
34  
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