GMS90 Series
HYUNDAI MicroElectronics
AC Characteristics for GMS90 series (40MHz)
External Data Memory Characteristics
Variable Clock
1/tCLCL = 3.5 to 40MHz
at 40 MHz Clock
Parameter
Symbol
Unit
Min.
120
120
10
-
Max.
Min.
Max.
tRLRH
tWLWH
tLLAX2
tRLDV
tRHDX
tRHDZ
tLLDV
-
-
6tCLCL-30
-
RD pulse width
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6tCLCL-30
-
WR pulse width
-
tCLCL-15
-
Address hold after ALE
RD to valid data in
75
-
-
5tCLCL-50
0
0
-
Data hold after RD
-
38
150
150
90
-
-
2tCLCL-12
Data float after RD
-
-
8tCLCL-50
ALE to valid data in
Address to valid data in
ALE to WR or RD
tAVDV
tLLWL
tAVWL
tWHLH
tQVWX
tQVWH
tWHQX
tRLAZ
-
-
9tCLCL-75
60
70
10
5
3tCLCL-15
4tCLCL-30
tCLCL-15
tCLCL-20
7tCLCL-50
tCLCL-20
-
3tCLCL+15
-
Address valid to WR or RD
WR or RD high to ALE high
Data valid to WR transition
Data setup before WR
Data hold after WR
Address float after RD
40
-
tCLCL+15
-
-
125
5
-
-
-
-
0
0
Advance Information (40MHz)
External Clock Drive
Variable Oscillator
(Freq. = 3.5 to 40MHz)
Parameter
Symbol
Unit
Min.
Max.
tCLCL
tCHCX
tCLCX
tCLCH
tCHCL
25
10
10
-
285.7
tCLCL - tCLCX
tCLCL - tCHCX
10
Oscillator period
High time
ns
ns
ns
ns
ns
Low time
Rise time
-
10
Fall time
Oct. 2000 Ver 3.1a
41
HYNIX [ HYNIX SEMICONDUCTOR ]
