GMS90 Series
HYUNDAI MicroElectronics
AC Characteristics for GMS90 series (24MHz)
External Data Memory Characteristics
Variable Oscillator
1/tCLCL = 3.5 to 24MHz
24 MHz Oscillator
Parameter
Symbol
Unit
Min.
180
180
15
-
Max.
Min.
Max.
tRLRH
tWLWH
tLLAX2
tRLDV
tRHDX
tRHDZ
tLLDV
-
6tCLCL-70
-
RD pulse width
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
6tCLCL-70
-
WR pulse width
tCLCL-27
-
Address hold after ALE
RD to valid data in
118
-
-
5tCLCL-90
0
0
-
Data hold after RD
-
63
200
220
175
-
-
-
2tCLCL-20
Data float after RD
-
8tCLCL-133
ALE to valid data in
Address to valid data in
ALE to WR or RD
tAVDV
tLLWL
tAVWL
tWHLH
tQVWX
tQVWH
tWHQX
tRLAZ
-
-
9tCLCL-155
75
67
17
5
3tCLCL-50
4tCLCL-97
tCLCL-25
tCLCL-37
7tCLCL-122
tCLCL-27
-
3tCLCL+50
-
Address valid to WR or RD
WR or RD high to ALE high
Data valid to WR transition
Data setup before WR
Data hold after WR
Address float after RD
67
-
tCLCL+25
-
-
170
15
-
-
-
-
0
0
Advance Information (24MHz)
External Clock Drive
Variable Oscillator
(Freq. = 3.5 to 24MHz)
Parameter
Symbol
Unit
Min.
Max.
tCLCL
tCHCX
tCLCX
tCLCH
tCHCL
41.7
12
12
-
285.7
tCLCL - tCLCX
tCLCL - tCHCX
12
Oscillator period
High time
ns
ns
ns
ns
ns
Low time
Rise time
-
12
Fall time
Oct. 2000 Ver 3.1a
37
HYNIX [ HYNIX SEMICONDUCTOR ]
