GMS90 Series
HYUNDAI MicroElectronics
AC Characteristics for GMS90 series (12MHz)
External Data Memory Characteristics
Variable Oscillator
1/tCLCL = 3.5 to 12MHz
12 MHz Oscillator
Parameter
Symbol
Unit
Min.
400
400
53
-
Max.
Min.
Max.
tRLRH
tWLWH
tLLAX2
tRLDV
tRHDX
tRHDZ
tLLDV
-
6tCLCL-100
-
RD pulse width
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
6tCLCL-100
-
WR pulse width
tCLCL-30
-
Address hold after ALE
RD to valid data in
252
-
-
5tCLCL-165
0
0
-
Data hold after RD
-
97
517
585
300
-
-
2tCLCL-70
Data float after RD
-
-
8tCLCL-150
ALE to valid data in
Address to valid data in
ALE to WR or RD
tAVDV
tLLWL
tAVWL
tWHLH
tQVWX
tQVWH
tWHQX
tRLAZ
-
-
9tCLCL-165
200
203
43
33
433
33
-
3tCLCL-50
4tCLCL-130
tCLCL-40
tCLCL-50
7tCLCL-150
tCLCL-50
-
3tCLCL+50
-
Address valid to WR or RD
WR or RD high to ALE high
Data valid to WR transition
Data setup before WR
Data hold after WR
Address float after RD
123
-
tCLCL+40
-
-
-
-
-
0
0
Advance Information (12MHz)
External Clock Drive
Variable Oscillator
(Freq. = 3.5 to 12MHz)
Parameter
Symbol
Unit
Min.
Max.
Oscillator period (VCC=5V)
Oscillator period (VCC=3.3V)
tCLCL
tCLCL
83.3
83.3
285.7
1
ns
tCHCX
tCLCX
tCLCH
tCHCL
20
20
-
tCLCL - tCLCX
ns
ns
ns
ns
High time
Low time
Rise time
Fall time
tCLCL - tCHCX
20
20
-
Oct. 2000 Ver 3.1a
33
HYNIX [ HYNIX SEMICONDUCTOR ]
