GMS81C5108
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage........................................... -0.3 to +7.0 V
Storage Temperature ................................-40 to +125 °C
Maximum current (ΣIOH)...................................... 60 mA
Note: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
Voltage on any pin with respect to Ground (VSS
)
............................................................... -0.3 to VDD+0.3
Maximum current sunk by (IOL per I/O Pin) ........20 mA
Maximum output current sourced by (IOH per I/O Pin)
...............................................................................15 mA
Maximum current (ΣIOL) ....................................100 mA
7.2 Recommended Operating Conditions
Specifications
Unit
Parameter
Symbol
Condition
Min.
Typ.
Max.
fMAIN=4MHz
fSUB=32.768kHz
VDD
Supply Voltage
2.0
-
4.0
V
fMAIN
fSUB
VDD=2~4V
VDD=2~4V
Main Operating Frequency
Sub Operating Frequency
Operating Temperature
0.4
-
-
4.2
-
MHz
kHz
°C
32.768
-
TOPR
-20
70
JUNE 2001 Ver 1.0
11
HYNIX [ HYNIX SEMICONDUCTOR ]
