GMS81C2012/GMS81C2020
HYUNDAI MicroElectronics
7.5 DC Electrical Characteristics for High-Voltage Pins
(VDD = 5.0V ± 10%, VSS = 0V, TA = -40 ~ 85°C, fXIN = 4 MHz, Vdisp = VDD-40V to VDD
)
Specification
Unit
Parameter
Pin
Symbol Test Condition
Typ.1
Min
Max
VIH
0.7VDD
VDD-40
VDD-3.0
VDD+0.3
0.3VDD
Input High Voltage R0,R1,R2,R30~R35,RA
Input Low Voltage R0,R1,R2,R30~R35,RA
V
V
VIL
IOH = -15mA
Output High
VOH
I
OH = -10mA
OH = - 4mA
VDD-2.0
DD-1.0
R0,R1,R2,R30~R35
Voltage
V
I
V
Vdisp = VDD-40
V
DD-37
DD-37
Output Low
VOL
R0,R1,R2,R30~R35
Voltage
150KΩ atVDD
-
V
V
40
VIN=VDD-40V
to VDD
Input High
IIH
R0,R1,R2,R30~R35,RA
Leakage Current
20
uA
Vdisp=VDD-35V
VIN=VDD
Input Pull-down
R0,R1,R2,R30~R35
Current(*Option)
IPD
VIH
200
600
1000
uA
V
0.7VDD
VDD+0.3
Input High Voltage R0,R1,R2,R30~R35,RA
1. Data in “Typ.” column is at 4.5V, 25 C unless otherwise stated. These parameters are for design guidance only and are not tested.
°
20
MAR. 2000 Ver 1.00
HYNIX [ HYNIX SEMICONDUCTOR ]
