HYUNDAI MicroElectronics
GMS81C2012/GMS81C2020
7.4 DC Electrical Characteristics for Standard Pins(5V)
(VDD = 5.0V ± 10%, VSS = 0V, TA = -40 ~ 85°C, fXIN = 4 MHz, Vdisp = VDD-40V to VDD),
Specification
Unit
Parameter
Pin
Symbol Test Condition
Typ.1
Min
Max
XIN, SXIN
VIH1
VIH2
0.9VDD
VDD+0.3
External Clock
External Clock
RESET,SIN,R55,SCLK,
INT0&1,EC0
0.8VDD
VDD+0.3
Input High Voltage
V
VIH3
VIL1
0.7VDD
-0.3
VDD+0.3
0.1VDD
R40~R43,R5,R6,R70~R73
XIN, SXIN
RESET,SIN,R55,SCLK,
INT0&1,EC0
VIL2
VIL3
0.2VDD
0.3VDD
Input Low Voltage
-0.3
-0.3
V
V
R40~R43,R5,R6,R70~R73
R40~R43,R5,R6,R70~R73
BUZO,T0O,PWM1O/T1O,
SCLK,SOUT
Output High
Voltage
VOH
IOH = -0.5mA
IOL = 1.6mA
VDD-0.5
R40~R43,R5,R6,R70~R73
BUZO,T0O,PWM1O/T1O,
SCLK,SOUT
VOL1
VOL2
Output Low
Voltage
0.4
2
V
I
OL = 10mA
IIH1
IIH2
IIL1
IIL2
R40~R43,R5,R6,R70~R73
1
1
Input High
Leakage Current
uA
uA
XIN
R40~R43,R5,R6,R70~R73
XIN
-1
-1
Input Low
Leakage Current
Input Pull-up
Current(*Option)
IPU
VPFD
IDD
R40~R43,R5,R6,R70~R73
50
100
2.7
180
uA
V
Power Fail
Detect Voltage
VDD
VDD
VDD
VDD
VDD
VDD
Current dissipation
in active mode
fXIN=4.5MHz
fXIN=4.5MHz
8
3
mA
mA
uA
Current dissipation
in standby mode
ISTBY
ISUB
IWTC
ISTOP
Current dissipation
in sub-active mode
fXIN = Off
fSXIN=32.7KHz
100
20
10
Current dissipation
in watch mode
fXIN=Off
fSXNI=32.7KHz
uA
Current dissipation
in stop mode
fXIN=Off
fSXIN=32.7KHz
uA
RESET,SIN,R55,SCLK,
INT0,INT1,EC0
V
T+~VT-
TRCWDT
fRCOSC
Hysteresis
0.4
8
V
Internal RC WDT
Frequency
XOUT
XOUT
30
KHz
MHz
RC Oscillation
Frequency
R= 120KΩ
1.5
2
2.5
1. Data in “Typ.” column is at 4.5V, 25 C unless otherwise stated. These parameters are for design guidance only and are not tested.
°
MAR. 2000 Ver 1.00
19
HYNIX [ HYNIX SEMICONDUCTOR ]
