GMS81C2012/GMS81C2020
HYUNDAI MicroElectronics
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage............................................. -0.3 to +7.0 V
Storage Temperature ....................................-40 to +85 °C
Maximum output current sourced by (IOH per I/O Pin)
................................................................................... 8 mA
Maximum current (ΣIOL)...................................... 100 mA
Maximum current (ΣIOH)........................................ 50 mA
Voltage on Normal voltage pin
with respect to Ground (VSS)
..............................................................-0.3 to VDD+0.3 V
Note: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
Voltage on High voltage pin
with respect to Ground (VSS)
............................................................-45V to VDD+0.3 V
Maximum current out of VSS pin..........................150 mA
Maximum current into VDD pin ..............................80 mA
Maximum current sunk by (IOL per I/O Pin) ..........20 mA
7.2 Recommended Operating Conditions
Specifications
Unit
Parameter
Symbol
Condition
Min.
2.7
1
Max.
5.5
4.5
85
VDD
fXIN
fXI = 4.5 MHz
VDD = VDD
Supply Voltage
V
Operating Frequency
Operating Temperature
MHz
°C
TOPR
-40
7.3 A/D Converter Characteristics
(TA=25°C, VDD=5V, VSS=0V, AVDD=5.12V, AVSS=0V @fXIN =4MHz)
Specifications
Parameter
Symbol
Condition
Unit
Typ.1
Min.
AVSS
Max.
AVDD
AVDD
VAN
Analog Power Supply Input Voltage Range
Analog Input Voltage Range
-
V
V
AVSS-0.3
AVDD+0.3
Current Following
Between AVDD and AVSS
IAVDD
-
−
200
uA
CAIN
NNLE
NDNLE
NZOE
NFSE
NNLE
TCONV
Overall Accuracy
Non-Linearity Error
Differential Non-Linearity Error
Zero Offset Error
Full Scale Error
-
-
-
-
-
-
-
±1.5
±1.5
±0.5
±0.5
±0.5
±0.5
-
±2
±2
LSB
LSB
LSB
LSB
LSB
LSB
us
±1
±1.5
±1
Gain Error
±1
fXIN=4MHz
Conversion Time
20
1. Data in “Typ” column is at 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
18
MAR. 2000 Ver 1.00
HYNIX [ HYNIX SEMICONDUCTOR ]
