HYUNDAI MicroElectronics
GMS82512/16/24
20.3 Programming Specification
DEVICE OPERATION MODE
(TA = 25°C ± 5°C)
VPP
VDD
5.0V
5.0V
Mode
Read Mode
CE
OE
A0~A15
O0~O7
2
X1
VDD
VDD
DOUT
X1
VIH
VIL
2
Output Disable Mode
Programming Mode
X1
X1
Hi-Z
DIN
VIH
VIH
2
2
VPP
VPP
VDD
2
2
Program Verify
X1
X1
VDD
DOUT
1. X = Either V or V
.
IH
IL
2. See DC Characteristics Table for V and V voltage during programming.
DD
PP
DEVICE CHARACTERISTICS
(VSS=0V, TA = 25°C ± 5°C)
Symbol
Item
Min
11.50
5.75
Typ
11.75
6.0
Max
12.0
6.25
50
Unit
V
Test condition
VPP
Quick Pulse Programming
Quick Pulse Programming
VPP supply current
1
VDD
V
2
CE=VIL
IPP
mA
2
VDD supply current
IDD
30
mA
V
VIH
VIL
0.8VDD
Input high voltage
Input low voltage
0.2VDD
V
VOH
VOL
IIL
VDD-0.1
IOH= -2.5mA
IOL= 2.1mA
Output high voltage
Output low voltage
Input leakage current
V
0.4
5
V
µA
1. V must be applied simultaneously or before V and removed simultaneously or after V .
PP
DD
PP
2. The maximum current value is with outputs O0 to O7 unloaded.
FEB. 2000 Ver 1.00
65
HYNIX [ HYNIX SEMICONDUCTOR ]
