GMS82512/16/24
HYUNDAI MicroElectronics
AC READING CHARACTERISTICS
(VSS=0V, TA = 25°C ± 5°C)
Symbol
tAS
Item
Min
Typ
Max
Unit
µs
Test condition
Address setup time
Quick Pulse Programming
VPP supply current
2
tOE
200
50
ns
tDH
0
ns
Note: V must be applied simultaneously or before V and removed simultaneously or after V .
PP
DD
PP
AC PROGRAMMING CHARACTERISTICS
(VSS=0V, TA = 25°C ± 5°C)
Symbol
tAS
Item
Address setup time
OE setup time
Min
2
Typ
Max
Unit
µs
µs
µs
µs
µs
ns
µs
µs
µs
ns
Test condition*
tOES
tDS
2
Data setup time
Address hold time
Data hold time
2
tAH
0
tDH
2
tDFP
tVPS
tVDS
tPW
Output delay disable time
VPP setup time
0
130
2
VDD setup time
2
Program pulse width
Data output delay time
95
100
105
150
tOE
* AC CONDITION OF TEST
Input Rise and Fall Times (10% to 90%) ........................... 20ns
Input Pulse Levels ............................................................. 0.45V to 4.55V
Input Timing Reference Level............................................ 1.0V to 4.0V
Output Timing Reference Level......................................... 1.0V to 4.0V
V
must be applied simultaneously or before V and removed simultaneously or after V .
PP PP
DD
68
FEB. 2000 Ver 1.00
HYNIX [ HYNIX SEMICONDUCTOR ]
