FDN338P
20V P-Channel Enhancement Mode MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
0.6
0.5
r DS(on)- On-Resistance (
W
)
I S - Source Current (A)
T
J
= 150_C
0.4
0.3
0.2
0.1
0.0
I
D
= 2.8 A
T
J
= 25_C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
0.4
0.3
V GS(th) Variance (V)
0.2
0.1
0.0
- 0.1
- 0.2
- 50
Threshold Voltage
14
12
10
Power (W)
8
6
4
2
0
Single Pulse Power
I
D
= 250
mA
T
C
= 25_C
Single Pulse
0
50
T
J
- Temperature (_C)
100
150
0.01
0.10
1.00
Time (sec)
10.00
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.05
0.02
Single Pulse
10
-3
10
-2
10
-1
1
10
30
0.1
0.01
10
-4
Square Wave Pulse Duration (sec)
４
JinYu
semiconductor
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