FDN338P
20V P-Channel Enhancement Mode MOSFET
_
Output Characteristics
V
GS
= 5, 4.5, 4, 3.5, 3 V
8
I D - Drain Current (A)
2.5 V
I D - Drain Current (A)
8
T
C
= - 55_C
10
10
Transfer Characteristics
6
2V
6
25_C
125_C
4
4
2
0, 0.5, 1 V
1.5 V
2
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
0.6
0.5
r DS(on)- On-Resistance (
W
)
0.4
0.3
On-Resistance vs. Drain Current
1000
Capacitance
800
C - Capacitance (pF)
600
C
iss
400
C
oss
200
C
rss
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
0.1
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
5
V
DS
= 6 V
I
D
= 2.8 A
V GS - Gate-to-Source Voltage (V)
4
Gate Charge
1.8
1.6
r DS(on)- On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
- 50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.8 A
3
2
1
0
0
2
4
6
8
0
50
100
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
３
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
