FDN338P
20V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
1)
1)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
fs
V
GS
= 0V, I
D
= -250uA
V
GS
= -4.5V, I
D
= -1.6A
V
GS
= -2.5V, I
D
= -1.3A
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -16V, V
GS
= 0V
V
GS
= ± 8V, V
DS
= 0V
V
DS
= -5V, I
D
= -2.8A
-20
88
116
-0.42
115
V
mΩ
160
-1.5
-1
±100
6.5
V
uA
nA
S
Q
g
Q
gs
Q
gd
t
d(on)
5.8
V
DS
= -6V, I
D
^
-2.8A
V
GS
= -4.5V
1.7
13
V
DD
= -6V, RL=6Ω
I
D
^
-1.A, V
GEN
= -4.5V
R
G
= 6
Ω
36
42
34
415
V
DS
= -6V, V
GS
= 0V
223
f = 1.0 MHz
87
0.85
10
nC
25
60
ns
70
60
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
pF
I
S
V
SD
I
S
= -1.6A, V
GS
= 0V
-0.8
-1.6
A
-1.2
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
２
JinYu
semiconductor
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