HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 2000.11.01
Page No. : 4/5
RDSON(Temp)
2.5
V
GS
=10V
RDS(on),Normalized Drain-Source On
Resistance (ohm)
2.0
IS, Reverse Drain Current (A)
Tc=100°C
1.5
Tc=25
°
C
1.0
10
9
Body Diode Forward Voltage Variation with
Current & Temperature
Tc=100
°
C
8
7
6
5
4
3
2
1
Tc=25
°
C
0.5
0.0
0
1
2
3
4
5
6
7
ID, Drain-Source Current (A)
8
9
10
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD, Body Diode Forward Voltage (V)
Capacitance Characteristices
1000
Ciss
Capacitance (pF)
100
Coss
Crss
10
1
0.1
1
10
VDS, Drain-Source Voltage (V)
100
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
