HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(Ta=25°C)
Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Forward Transconductance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain Charge (Miller)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
gfs
R
DS(ON)
C
iss
C
rss
C
oss
t
r
t
on
t
f
T
off
Q
g
Q
gs
Q
gd
Min.
250
2.0
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.2
1.2
280
30
42
45
30
45
135
-
-
-
Max.
-
4.0
25
±100
-
2.0
-
-
-
-
-
-
-
8.2
1.8
4.5
Unit
V
V
uA
uA
Ω
pF
pF
pF
nS
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 2000.11.01
Page No. : 2/5
Test Conditions
I
D
=250uA
V
DS
=4V, I
D
=250uA
V
DS
=200V
V
GS
=±20V
V
DS
=50V,I
D
=1.3A
V
GS
=10V, I
D
=1.3A
V
DS
=10V, V
GS
=0V
f=1.0MHz
V
DD
=100V, I
D
=1.0A
R
G
=24Ω, R
D
=45Ω
nC
nC
nC
I
D
=2.7A, V
DS
=200V
V
GS
=10V
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
