HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
7
V
GS
=10V
6
ID, Drain-Source Current (A)
5
V
GS
=6V
4
3
2
V
GS
=4V
1
V
GS
=2V
0
0
1
2
3
4
5
6
7
VDS,Drain-Source Voltage (V)
8
9
10
0.95
20
40
V
GS
=8V
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.13
1.11
1.09
1.07
1.05
1.03
1.01
0.99
0.97
1.15
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 2000.11.01
Page No. : 3/5
Breakdown Voltage Variation with Temperature
60
80
Tc, Case Temperature (°C)
100
On Resistance Variation with Temperature
2.5
V
GS
=10V
RDS(on), Drain-Source On-Resistance
(ohm)
RDS(on), Drain-Source On-Resistance
(ohm)
2.3
2.1
1.9
I
D
=1.3A
1.7
1.5
1.3
1.1
0.9
25
35
45
55
65
75
85
95
Tc, Case Temperature (°C)
105
115
125
2.0
1.8
Typical On-Resistance & Drain-Current
V
GS
=6V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
ID, Drain-Source Current (A)
8
9
10
V
GS
=10V
Transconductance Variation with Drain Current
& Temperature
5
V
DS
=10V
GFS,Transconductance (S)
ID, Drain-source Current (A)
4
Tc=25°C
3
Tc=100°C
2
4
5
Drain Current Variation with Gate Voltage &
Temperature
V
DS
=10V
TC=100°C
3
Tc=25°C
2
1
1
0
0
1
2
3
4
5
6
ID, Drain-Source Current (A)
7
8
0
0
1
2
3
4
5
6
VGS, Gate-Source Votltage(V)
7
8
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
