HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 4/5
Breakdown Voltage Variation & Temperature
1.20
10
Body Diode Forward Voltage Variation &
Current & Temperature
Tc=100°C
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.15
I
S
,Reverse Drain Current (A)
Tc=25°C
8
1.10
6
1.05
4
1.00
2
0.95
25
50
75
100
125
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Tc, Case Temperature (°C)
V
SD
, Body Diode Forward Voltage (V)
Maximum Safe Operating Area (TO-220 FP)
100.00
V
GS
=10V
Si ngle Pulse
Tc=25°C
16
14
Dynamic Input /Output Characteristics
I
D
=6A
Tc=25°C
10.00
Gate-Source Voltage V
GS
(V)
I
D
,Drain-Source Current (A)
100us
12
V
DD
=240V
10
V
DD
=120V
8
6
4
2
V
DD
=400V
R
DS(on)
Line
1ms
10ms
100ms
1.00
0.10
Dc
0.01
0.1
1
10
100
1000
10000
0
0
10
20
30
40
50
60
70
V
DS
,Drain-Source Voltage (V)
Total Gate Charge Qg (nC)
Transient Thermal Response Curve(TO-220FP)
1.00
r(t) Normalized Effective Transient Thermal
Resistance
0.5
0.2
0.1
0.10
0.05
RθJC(t) = r(t) * RθJC(t)
RθJC =2.46
°C
/ W
P(pk)
t1
0.02
t2
0.01
Single Pulse
0.01
0.1
1
10
100
TJ-TC=P*RθJC(t)
Duty Cycle, D=t1/t2
1000
t 1 ,Time(ms)
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
