HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 3/5
Drain Current Variation & Gate Voltage &
Temperature
6
V
DS
=10V
5
Tc=100°C
Transconductance Variation & Drain
Current & Temperature
10
V
DS
=10V
9
Tc=25°C
I
D
Drain-Source Current (A)
gFS,Transconductance (S)
Tc=25°C
4
8
7
6
5
4
3
2
1
Tc=100°C
3
2
1
0
0
1
2
3
4
5
6
7
8
0
0
2
4
6
8
V
GS
, Gate-Source Voltage (V)
I
D
, Drain Current (A)
On Resistance Variation & Temperature
4.0
V
GS
=10V
Capacitance Characteristics
10000
RDS(ON) Normalized Drain-Source On-
Resistance
3.5
Ciss
3.0
2.5
2.0
I
D
=3A
1.5
1.0
0.5
0.0
20
40
60
80
100
120
140
I
D
=6A
I
D
=1A
1000
Capacitance (pF)
Coss
100
Crss
10
1
1
10
100
Tc, Case Temperature (°C)
V
DS
, Drain-Source
Voltage (V)
Typical On-Resistance & Drain Current
2.4
2.4
Typical On-Resistance & Drain Current
RDS(ON) Drain-Source On-Resistance
RDS(ON) Drain-Source On-Resistance
V
GS
=10V
2.0
Tc=100°C
1.6
2.0
1.6
1.2
Tc=25°C
0.8
1.2
V
GS
=10V
0.8
V
GS
=15V
0.4
0.4
0.0
0
2
4
6
8
10
0.0
0
2
4
6
8
10
I
D
, Drain Current (A)
I
D
, Drain Current (A)
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
