HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/5
HSK1118
Description
•
Field Effect Transistor.
•
Silicon N Channel MOS Type.
•
High Speed, High Current DC-DC Converter, Relay Drive and
Motor Drive Applications
Features
•
4-Volt Gate Drive
•
Low Drain-Source On Resistanc - R
DS(on)
=0.95Ω (Typ.)
•
High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)
•
Low Leakage Current - I
DSS
= 300uA (Max.) @V
DS
= 600V
•
Enhancement-Mode - V
th
= 1.5~3.5V @V
DS
= 10V, I
D
= 1mA
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................................... 150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 45 W
•
Maximum Voltages and Currents (Tc=25°C)
DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V
DRAIN to GATE Breakdown Voltage ................................................................................ 600 V
GATE to SOURCE Voltage ...............................................................................................
±30
V
DRAIN Current (Cont.).......................................................................................................... 6 A
DRAIN Current (Pluse) ....................................................................................................... 24 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
RθJC
RθJA
Max.
2.77
62.5
Units
°C/W
°C/W
Note : This transistor is an electrostatic sensitive device. Please handle with care.
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
