HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
30
Ta=25
℃
25
ID,Drain current(
20
15
10
5
0
0
2
4
6
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output
8
-5V
-4V
-3V
-2 V
30
25
ID,Drain current(
20
15
10
5
0
0
Ta=150
℃
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 3/5
-5V
-4V
-3V
-2V
-1.5V
-1.5V
2
4
6
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output
Ch
i i
8
70
65
80
70
Normalized RDS( O
60
50
40
30
20
10
0
-50
-25
0
25
50
75 100 125
Tj,Junction Temperature(
℃
)
Fig 4.Normalized On-Resistance v.s.Junction
150
ID=-4.2A
VGS=-4.5V
RDS(ON)(m
Ω
60
55
50
45
40
1
ID=4.2A
Ta=25
℃
2
3
4
5
VGS,Gate-to-Source Voltage(V)
Fig 3.On-Resistance v.s.Gate
6
10
Tj=150
℃
Tj=25
℃
VGS(th)( V
0.6
0.5
0.4
0.3
0.2
0.1
1
IS(A)
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse
1.4
0
-50
-25
0
25
50
75
100 125 150 175
Tj,Junction Temperature(
℃
)
Fig 6.Gate Threshold Voltage
HSMC Product Specification
H2305N
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
