HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
Reference to 25℃,
ID=-1mA
V
GS
=-4.5V, I
D
=-2.8A
R
DS(on)
Drain-Source On-State Resistance
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
V
GS(th)
I
DSS
I
GSS
g
FS
Gate Threshold Voltage
Zero Gate Voltage Drain Current (Tj=25oC)
Zero Gate Voltage Drain Current (Tj=55oC)
Gate-Body Leakage Current
Forward Transconductance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=-5V, I
D
=-2.8A
-
-0. 45
-
-
-
-
-
-20
Characteristic
Test Conditions
Min.
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 2/5
Typ.
Max.
Unit
-
-0.1
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
V/℃
58
71
108
V
-1
-10
uA
uA
nA
S
mΩ
-
9.0
±100
-
•
Drain-Source Diode Characteristics
V
SD
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-1.2A
-
-
-1.2
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H2305N
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
