HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 1/5
H2305N
P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)
H2305N Pin Assignment & Symbol
3
2
3-Lead Plastic
SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Source
Gate
1
Features
•
R
DS(on)
<58mΩ@V
GS
=-4.5V, I
D
=-4.2A
•
R
DS(on)
<71mΩ@V
GS
=-2.5V, I
D
=-2A
•
Simple Drive Requirement
•
Small Package Outline
•
ISurface Mount Device
Drain
Description
The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching
low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for
low voltage, applications such as DC/DC converters.
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
ID@TA=25℃
ID@TA=70℃
I
DM
P
D
T
stg
T
j
,
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current)
Continuous Drain Current
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Ratings
-20
±8
-4.5
-3.5
-10
1.38
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
°C
°C
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in
2
2oz Cu PCB board
H2305N
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
