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ATF-541M4-BLK 参数 Datasheet PDF下载

ATF-541M4-BLK图片预览
型号: ATF-541M4-BLK
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声增强模式伪HEMT的微型无铅封装 [Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package]
分类和应用: 晶体晶体管放大器
文件页数/大小: 16 页 / 166 K
品牌: HP [ HEWLETT-PACKARD ]
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0.4  
0.016  
This pad print provides allow-  
ance for package placement by  
automated assembly equipment  
without adding excessive  
parasitics that could impair the  
high frequency performance of  
the ATF-541M4. The layout is  
shown with a footprint of the  
ATF-541M4 superimposed on the  
PCB pads for reference.  
For Further Information  
The information presented here is  
an introduction to the use of the  
ATF-541M4 enhancement mode  
PHEMT. More detailed application  
circuit information is available  
from Agilent Technologies. Consult  
the web page or your local Agilent  
Technologies sales representative.  
0.3  
0.012  
0.5  
0.020  
1.1  
0.043  
0.3  
0.012  
0.4  
0.016  
0.5  
0.020  
Figure 3. PCB Pad Print for Minipak 1412.  
Package (mm [inches ]).  
ATF-541M4 Die Model  
Advanced_Curtice2_Model  
MESFETM1  
NFET=yes  
PFET=no  
Vto=0.3  
Beta=0.888  
Lambda=72e-3  
Alpha=13  
Tau=  
Rf=  
Crf=0.1 F  
Gsfwd=  
Gsrev=  
Gdfwd=  
Gdrev=  
R1=  
R2=  
Vbi=0.95  
Vbr=  
Vjr=  
Is=  
Ir=  
Imax=  
Xti=  
N=  
Fnc=1 MHz  
R=0.08  
P=0.2  
C=0.1  
Taumdl=no  
wVgfwd=  
wBvgs=  
wBvgd=  
wBvds=  
wldsmax=  
wPmax=  
AllParams=  
Gscap=2  
Cgs=1.732 pF  
Cgd=0.255 pF  
Gdcap=2  
Fc=0.65  
Rgd=0.25 Ohm  
Rd=1.0125 Ohm  
Rg=1.7 Ohm  
Rs=0.3375 Ohm  
Ld=  
Lg=0.188 nH  
Ls=  
Cds=0.273 pF  
Rc=195 Ohm  
Tnom=16.85  
Idstc=  
Ucrit=-0.72  
Vgexp=1.91  
Gamds=1e-4  
Vtotc=  
Betatce=  
Rgs=0.25 Ohm  
Eg=  
ATF-541M4 Minipak Model  
INSIDE Package  
VAR  
VAR1  
K=5  
Var  
Egn  
TLINP  
TL1  
TLINP  
TL2  
Z2=85  
Z1=30  
Z=Z2/2 Ohm  
L=22 mil  
K=K  
A=0.000  
F=1 GHz  
TanD=0.001  
Z=Z2/2 Ohm  
L=20 0 mil  
K=K  
C
A=0.000  
C1  
F=1 GHz  
TanD=0.001  
GATE  
SOURCE  
C=0.28 pF  
L
L
Port  
G
Num=1  
TLINP  
TLINP  
Port  
L6  
L1  
TL7  
TL3  
S2  
L=0.147 nH  
R=0.001  
L=0.234 nH  
R=0.001  
Z=Z2/2 Ohm  
L=5.2 mil  
K=K  
A=0.000  
F=1 GHz  
TanD=0.001  
Z=Z2 Ohm  
L=23.6 mil  
K=K  
A=0.000  
F=1 GHz  
TanD=0.001  
Num=4  
C
C2  
GaAsFET  
FET1  
C=0.046 pF  
Mode1=MESFETM1  
Mode=Nonlinear  
DRAIN  
SOURCE  
L
TLINP  
Port  
D
Num=3  
L7  
TL5  
L=0.234 nH  
R=0.001  
L
Port  
TLINP  
Z=Z2 Ohm  
L=27.5 mil  
K=K  
A=0.000  
F=1 GHz  
TanD=0.001  
L4  
MSub  
S1  
TL9  
L=0.281 nH  
R=0.001  
Num=2  
Z=Z2 Ohm  
L=11 mil  
K=K  
A=0.000  
F=1 GHz  
TanD=0.001  
MSUB  
MSub2  
H=25.0 mil  
Er=9.6  
Mur=1  
Cond=1.0E+50  
Hu=3.9e+034 mil  
T=0.15 mil  
TanD=0  
Rough=0 mil  
This model can be used as a design tool. It has been tested on ADS for various specifications. However, for  
more precise and accurate design, please refer to the measured data in this data sheet. For future  
improvements, Agilent reserves the right to change these models without prior notice.  
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