6
ATF-34143 Power Parameters tuned for Power,
V
DS
= 4 V, I
DSQ
= 120 mA
Freq
(GHz)
0.9
1.5
1.8
2
4
6
P
1dB
(dBm)
20.9
21.7
21.3
22.0
22.7
23.3
I
d
(mA)
114
115
111
106
110
115
G
1dB
(dB)
25.7
21.9
20.5
19.5
12.7
9.2
PAE
1dB
(%)
27
32
30
37
40
41
P
3dBm
(dBm)
22.8
23.1
23.0
23.7
23.6
24.2
I
d
(mA)
108
95
105
115
111
121
PAE
3dB
(%)
44
53
47
50
47
44
Gamma
Out_mag
(Mag)
0.34
0.31
0.30
0.28
0.26
0.24
Gamma
Out_ang
(Degrees)
136
152
164
171
-135
-66
ATF-34143 Power Parameters tuned for Power,
V
DS
= 4 V, I
DSQ
= 60 mA
Freq
(GHz)
0.9
1.5
1.8
2
4
6
80
50
60
P
out
(dBm), G (dB),
PAE (%)
P
1dB
(dBm)
18.2
18.7
18.8
18.8
20.2
21.2
I
d
(mA)
75
58
57
59
66
79
G
1dB
(dB)
27.5
24.5
23.0
22.2
13.9
9.9
PAE
1dB
(%)
22
32
33
32
38
37
80
P
3dBm
(dBm)
20.5
20.8
21.1
21.9
22.0
23.5
I
d
(mA)
78
59
71
81
77
102
PAE
3dB
(%)
36
51
45
47
48
46
Gamma
Out_mag
(Mag)
0.48
0.45
0.42
0.40
0.25
0.18
Gamma
Out_ang
(Degrees)
102
117
126
131
-162
-77
40
30
20
10
0
-10
-30
P
out
Gain
PAE
P
out
(dBm), G (dB),
PAE (%)
40
20
0
P
out
Gain
PAE
-20
-10
0
10
20
-20
-30
-20
-10
0
10
20
P
in
(dBm)
P
in
(dBm)
Figure 20. Swept Power Tuned for
Power at 2 GHz, V
DS
= 4 V, I
DSQ
= 120 mA.
Figure 21. Swept Power Tuned for
Power at 2 GHz, V
DS
= 4 V, I
DSQ
= 60 mA.
Notes:
1. P
1dB
measurements are performed with passive biasing. Quicescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the device
is running closer to class B as power output approaches P
1dB
. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 4 V and
I
DSQ
= 10 mA, I
d
increases to 62 mA as a P
1dB
of +19 dBm is approached.
2. PAE(%) = ((Pout – Pin) / Pdc) x 100
3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
HP [ AGILENT(HEWLETT-PACKARD) ]
